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| AEGIS SEMICONDUTORES LTDA. A1C:300S.XX.10 VOLTAGE RATINGS Part Number VRRM , VR (V) Max. rep. peak reverse voltage TJ = 0 to 150 OC A1C:300S.02.10 A1C:300S.04.10 A1C:300S.06.10 A1C:300S.08.10 A1C:300S.10.10 A1C:300S.12.10 A1C:300S.14.10 A1C:300S.16.10 200 400 600 800 1000 1200 1400 1600 TJ = -40 to 0OC 200 400 600 800 1000 1200 1400 1600 VRSM , VR (V) Max. nonrep. peak reverse voltage TJ = 25 to 150 OC 300 500 700 900 1100 1300 1500 1700 This datasheet applies to: Metric thread: A1C:300S.XX.10, A1D:300S.XX.10 Inch thread: A2C:300S.XX.10, A2D:300S.XX.10 MAXIMUM ALLOWABLE RATINGS PARAMETER TJ Junction Temperature Tstg Storage Temperature @ Max. TC IF(RMS) Nom. RMS current IF(AV) Max. Av. current VALUE -40 to 150 -40 to 150 300 100 470 8.89 IFSM Max. Peak non-rep. surge current 9.69 kA 10.14 11.05 411 448 I2t Max. I2t capability 469 511 I2t1/2 Max. I2t1/2 capability IRRM Maximum peak reverse current at rated VRRM. IRM Peak reverse recovery current IFM Peak forward current di/dt Max. Non-repetitive rate-ofrise current F Mounting Force 5610 1.3 50 300 50 60 A2s1/2 mA A A A/ms N.m TJ = 25 C, VD = VDRM, IFM = 300A. O UNITS O O NOTES 180O half sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave t = 10ms t = 8.3 ms Initial T J = 125OC, rated VRRM applied after surge. O C C C A O A Initial T J = 125 C, no voltage applied after surge. Initial T J = 125OC, rated VRRM applied after surge. kA2s t = 10ms t = 8.3 ms Initial T J = 125 OC, no voltage applied after surge. Initial T J = 125OC, no voltage applied after surge. I2t for time t x = I2t1/2 * tx1/2. (0.1 < tx < 10ms). TJ = 25 C O AEGIS A1C:300S.XX.10 CHARACTERISTICS PARAMETER VFM peak on-state voltage VF(TO) Threshold voltage rF Slope resistance trr Maximum reverse recovery time RthJC Thermal resistance, junction-to-case RthCS Thermal resistance, case-to-sink wt Weight Case Style MIN. ------------------TYP. --------------500(17.5) MAX. UNITS 1.75 0.8 1.5 1000 2000 0.15 0.015 --O V V mW ns TEST CONDITIONS Initial T J = 25OC, 50-60Hz half sine, Ipeak = 943A. TJ = 150OC TJ = 25OC, IF = 1A to V R = 30V, -dI F/dt = 25A/ms TJ = 25OC, -dIF/dt = 25A/ms, IFM = p x rated IF(Av.). C/W DC operation O C/W Mtg. Surface smooth, flat and greased. Single side cooled. ----- g(oz.) DO-205AD (DO-13) JEDEC Maximum Allowable Case Temperature (C) 150 140 130 120 Maximum Allowable Case Temperature Maximum Allowable Case Temperature 150 Maximum Allowable Case Temperature (C) 140 130 120 110 100 90 DC 30 60 90 120 180 30 110 100 90 80 0 *Sinusoidal waveform 60 90 120 180 80 0 *Rectangular waveform 50 100 150 200 250 300 100 200 300 400 500 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Ratings Characteristics 5000 Fig. 2 - Current Ratings Characteristics 3500 Maximum Average Forward Power Loss 30 Maximum Average Forward Power Loss 30 Maximum Average Forward Power Loss (W) Maximum Average Forward Power Loss (W) 3000 2500 2000 1500 1000 500 0 *Rectangular waveform 4000 3000 60 60 2000 90 120 90 120 180 DC 1000 180 0 *Sinusoidal waveform 0 100 200 300 400 500 0 100 200 300 400 500 Average Forward Current (A) Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics Fig. 4 - Forward Power Loss Characteristics AEGIS A1C:300S.XX.10 Forward Voltage Drop 1000 1 Transient Thermal Impedance ZthJC Transient Thermal Impedance ZthJC (C/W) Instantaneous Forward Current (A) 0.1 100 125C 25C 10 0.6 0.8 1.0 1.2 1.4 1.6 0.01 1E-3 0.01 0.1 1 10 Instantaneous Forward Voltage (V) Time (s) Fig. 5 - Forward Voltage Drop Characteristics Fig. 6 - Transient Thermal Impedance Characteristics Frequency Characteristics Frequency Characteristics Peak On-State Current (A) 100 Hz 200 Hz 500 Hz 1 kHz 2 kHz Peak On-State Current (A) 50 Hz 50 Hz 100 Hz 200 Hz 500 Hz 1 kHz 2 kHz 5 kHz 1000 5 kHz 10 kHz 10 kHz 1000 1x101 *Sinusoidal pulse Tc = 60C 1x102 1x103 104 1x101 *Rectangular pulse Tc = 60C 1x102 1x103 104 Pulse Basewidth (ms) Pulse Basewidth (ms) Fig. 7 - Frequency Characteristics Frequency Characteristics Fig. 8 - Frequency Characteristics Frequency Characteristics 50 Hz 100 Hz 200 Hz Peak On-State Current (A) 50 Hz 100 Hz 200 Hz 500 Hz 1 kHz 2 kHz 5 kHz Peak On-State Current (A) 500 Hz 1 kHz 2 kHz 1000 5 kHz 10 kHz 1000 10 kHz *Sinusoidal Pulse Tc = 80C 1x102 1x103 104 100 1x101 *Rectangular Pulse Tc = 80C 1x102 1x103 104 Pulse Basewidth (ms) Pulse Basewidth (ms) Fig. 9 - Frequency Characteristics Fig. 10 - Frequency Characteristics AEGIS A1C:300S.XX.10 Frequency Characteristic Frequency Characteristics 50 Hz Peak On-State Current (A) 50 Hz 100 Hz 200 Hz 500 Hz Peak On-State (A) 100 Hz 200 Hz 500 Hz 1 kHz 2 kHz 5 kHz 1000 2 kHz 1 kHz 1000 5 kHz 10 kHz *Sinusoidal pulse Tc = 100C 1x102 1x103 104 Pulse Basewidth (ms) *Rectangular pulse Tc = 100C 1E-4 1E-3 0.01 Pulse Basewidth (ms) Fig. 11 - Frequency Characteristics Fig. 12 - Frequency Characteristics Maximum On-State Energy Power Loss 1000 5J 10 J Maximum On-State Energy Power Loss 1000 10 J 5J Peak On-State Current (A) 2J 1J 0.5 J 0.05 J 0.01 J 0.02 J 0.1 J 0.2 J Peak On-State Current (A) 2J 1J 0.1 J 0.2 J 0.5 J 0.01 J 0.02 J 0.05 J 100 100 10 *Sinusoidal pulse 10 1x102 1x103 104 1x102 *Rectangular pulse 1x103 104 Pulse Basewidth (ms) Pulse Basewidth (ms) Fig. 13 - Maximum On-State Power Loss Characteristics Fig. 14 - Maximum On-State Power Loss Characteristics DO-205AC(DO-13) M24 x 1.5 (3/4" - 16UNF - 2A) SW43 Fig. 15 - Outline Characteristics |
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